TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC5356 2SC5356 High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications Unit: mm Excellent switching times: tf = 0.5 μs (max) (IC = 1.2 A) High collectors breakdown voltage: VCEO = 800 V High DC current gain: hFE = 15 (min) (IC = 0.15 A) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter
2SC5356_ToshibaSemiconductor.pdf
Datasheet Details
Part number:
2SC5356
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
185.93 KB
Description:
Npn transistor.