2SC5352 Datasheet - Toshiba Semiconductor

2SC5352 NPN TRANSISTOR

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5352 Switching Regulator and High-Voltage Switching Applications High-Speed DC-DC Converter Applications 2SC5352 Unit: mm Excellent switching times: tr = 0.5 µs (max), tf = 0.3 µs (max) (IC = 4 A) High breakdown voltage: VCEO = 400 V Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipatio.

2SC5352_ToshibaSemiconductor.pdf