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2SJ349 Datasheet - Toshiba Semiconductor

2SJ349 P-Channel MOSFET

2SJ349 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2 π MOSV) 2SJ349 DC DC Converter, Relay Drive and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain source ON-resistance : RDS (ON) = 33 mΩ (typ.) z High forward transfer admittance : |Yfs| = 20 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 60 V) z Enhancement mode: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA) .

2SJ349_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

2SJ349

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

425.63 KB

Description:

P-channel mosfet.

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2SJ349 2SJ349 P-Channel MOSFET Toshiba Semiconductor

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