2SJ349 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2 π MOSV) 2SJ349 DC DC Converter, Relay Drive and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain source ON-resistance : RDS (ON) = 33 mΩ (typ.) z High forward transfer admittance : |Yfs| = 20 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 60 V) z Enhancement mode: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA)
2SJ349_ToshibaSemiconductor.pdf
Datasheet Details
Part number:
2SJ349
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
425.63 KB
Description:
P-channel mosfet.