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2SK2162 - Silicon N-Channel MOS Type Field Effect Transistor

2SK2162 Description

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type 2SK2162 2SK2162 Audio-Frequency Power Amplifier Applications * High breakdown vo.

2SK2162 Applications

* High breakdown voltage: VDSS = 180 V
* High forward transfer admittance: |Yfs| = 0.7 S (typ. )
* Complementary to 2SJ338 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (Note 1) Power di

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Silicon N-Channel MOS Type Field Effect Transistor Toshiba Semiconductor
Toshiba Semiconductor 2SK2162-like datasheet