2SK2162 - Silicon N-Channel MOS Type Field Effect Transistor
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type 2SK2162 2SK2162 Audio-Frequency Power Amplifier Applications High breakdown voltage: VDSS = 180 V High forward transfer admittance: |Yfs| = 0.7 S (typ.) Complementary to 2SJ338 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (Note 1) Power dissipation (Tc = 25°C) Channel temperature Storage temperature range VDSS VG
