2SK2162 Silicon N-Channel MOS Type Field Effect Transistor

Toshiba Semiconductor

Description

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type 2SK2162 2SK2162 Audio-Frequency Power Amplifier Applications * High breakdown vo.

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Datasheet Specifications

Part number: 2SK2162
Manufacturer: Toshiba ↗ Semiconductor
File Size: 120.32 KB
Datasheet: 2SK2162_ToshibaSemiconductor.pdf
Description: Silicon N-Channel MOS Type Field Effect Transistor

Applications

* High breakdown voltage: VDSS = 180 V
* High forward transfer admittance: |Yfs| = 0.7 S (typ. )
* Complementary to 2SJ338 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (Note 1) Power di

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📁 Related Datasheet

2SK216 2SK2160 2SK2161 2SK2165-01 2SK2166-01R 2SK2167

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2SK2162 Silicon N-Channel MOS Type Field Effect Transistor Toshiba Semiconductor

Toshiba Semiconductor 2SK2162-like datasheet