2SK2162 Datasheet - Toshiba Semiconductor

2SK2162, Silicon N-Channel MOS Type Field Effect Transistor

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type 2SK2162 2SK2162 Audio-Frequency Power Amplifier Applications * High breakdown vo.

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2SK2162_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

2SK2162

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

120.32 KB

Description:

Silicon N-Channel MOS Type Field Effect Transistor

Applications

* High breakdown voltage: VDSS = 180 V
* High forward transfer admittance: |Yfs| = 0.7 S (typ. )
* Complementary to 2SJ338 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (Note 1) Power di

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2SK2162 Silicon N-Channel MOS Type Field Effect Transistor Toshiba Semiconductor

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