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2SK2162 Datasheet - Toshiba Semiconductor

2SK2162 Silicon N-Channel MOS Type Field Effect Transistor

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type 2SK2162 2SK2162 Audio-Frequency Power Amplifier Applications High breakdown voltage: VDSS = 180 V High forward transfer admittance: |Yfs| = 0.7 S (typ.) Complementary to 2SJ338 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (Note 1) Power dissipation (Tc = 25°C) Channel temperature Storage temperature range VDSS VG.

2SK2162 Datasheet (120.32 KB)

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Datasheet Details

Part number:

2SK2162

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

120.32 KB

Description:

Silicon n-channel mos type field effect transistor.

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2SK2162 Silicon N-Channel MOS Type Field Effect Transistor Toshiba Semiconductor

2SK2162 Distributor