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2SK2009 Datasheet - Toshiba Semiconductor

2SK2009 N-Channel MOSFET

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2009 High Speed Switching Applications Analog Switch Applications High input impedance. Low gate threshold voltage: Vth = 0.5 to 1.5 V Excellent switching times: ton = 0.06 μs (typ.) toff = 0.12 μs (typ.) Low drain-source ON resistance: RDS (ON) = 1.2 Ω (typ.) Small package Enhancement-mode Marking Equivalent Circuit 2SK2009 Unit: mm Absolute Maximum Ratings (Ta = 25°C) .

2SK2009 Datasheet (273.79 KB)

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Datasheet Details

Part number:

2SK2009

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

273.79 KB

Description:

N-channel mosfet.

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2SK2009 N-Channel MOSFET Toshiba Semiconductor

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