2SK2002-01M Datasheet, Transistor, Inchange Semiconductor

PDF File Details

Part number:

2SK2002-01M

Manufacturer:

Inchange Semiconductor

File Size:

212.45kb

Download:

📄 Datasheet

Description:

N-channel mosfet transistor.

  • Drain Current   –ID= 3A@ TC=25℃
  • Drain Source Voltage- : VDSS=600V(Min)
  • Fast Switching Speed

  • Datasheet Preview: 2SK2002-01M 📥 Download PDF (212.45kb)
    Page 2 of 2SK2002-01M

    2SK2002-01M Application

    • Applications
    • Switching regulators
    • UPS
    • General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER

    TAGS

    2SK2002-01M
    N-Channel
    MOSFET
    Transistor
    Inchange Semiconductor

    📁 Related Datasheet

    2SK2002-01MR - N-channel MOS-FET (Fuji Electric)
    2SK2002-01MR FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guaran.

    2SK2000-R - Power MOSFET (Fuji Electric)
    .

    2SK2003-01M - N-Channel MOSFET Transistor (Inchange Semiconductor)
    isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Fast Switching Speed ·Minimum Lot.

    2SK2003-01MR - N-channel MOS-FET (Fuji Electric)
    2SK2003-01MR FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guaran.

    2SK2004-01L - N-channel MOS-FET (Fuji Electric)
    2SK2004-01L,S FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guara.

    2SK2004-01S - N-channel MOS-FET (Fuji Electric)
    2SK2004-01L,S FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guara.

    2SK2007 - Silicon N-Channel MOS FET (Hitachi Semiconductor)
    2SK2007 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current.

    2SK2008 - Silicon N-Channel MOS FET (Hitachi Semiconductor)
    2SK2008 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current.

    2SK2009 - N-Channel MOSFET (Toshiba Semiconductor)
    TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2009 High Speed Switching Applications Analog Switch Applications • High input impedanc.

    2SK2010 - N-Channel Silicon MOSFET (Sanyo Semicon Device)
    Ordering number:ENN4319 N-Channel Silicon MOSFET 2SK2010 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed swit.

    Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts