Part number:
2SK2000-R
Manufacturer:
Fuji Electric
File Size:
145.15 KB
Description:
Power mosfet.
.
.
Download Datasheet (145.15 KB)
Download Datasheet (145.15 KB)
2SK2000-R
Fuji Electric
145.15 KB
Power mosfet.
.
.
📁 Related Datasheet
2SK2002-01M - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID= 3A@ TC=25℃ ·Drain Source Voltage-
: VDSS=600V(Min) ·Fast Switching Speed ·Minimum Lot.
2SK2002-01MR - N-channel MOS-FET
(Fuji Electric)
2SK2002-01MR
FAP-IIA Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guaran.
2SK2003-01M - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID= 4A@ TC=25℃ ·Drain Source Voltage-
: VDSS=600V(Min) ·Fast Switching Speed ·Minimum Lot.
2SK2003-01MR - N-channel MOS-FET
(Fuji Electric)
2SK2003-01MR
FAP-IIA Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guaran.
2SK2004-01L - N-channel MOS-FET
(Fuji Electric)
2SK2004-01L,S
FAP-IIA Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guara.
2SK2004-01S - N-channel MOS-FET
(Fuji Electric)
2SK2004-01L,S
FAP-IIA Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guara.
