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2SK2013 Datasheet - Toshiba Semiconductor

2SK2013 Silicon N Channel MOS Type Field Effect Transistor

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2013 2SK2013 Audio Frequency Power Amplifier Application z High breakdown voltage z High forward transfer admittance z Complementary to 2SJ313 : VDSS = 180V : |Yfs| = 0.7 S (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain source voltage Gate source voltage Drain current (Note 2) Drain power dissipation (Tc = 25°C) Channel temperature Storage temperature range VDSS VG.

2SK2013_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

2SK2013

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

258.89 KB

Description:

Silicon n channel mos type field effect transistor.

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2SK2013 2SK2013 Silicon Channel MOS Type Field Effect Transistor Toshiba Semiconductor

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