2SK2013
Toshiba ↗ Semiconductor
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Silicon n channel mos type field effect transistor.
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK2013
2SK2013
Audio Frequency Power Amplifier Application
z High breakdown voltage z H.
📁 Related Datasheet
2SK2010 - N-Channel Silicon MOSFET
(Sanyo Semicon Device)
Ordering number:ENN4319
N-Channel Silicon MOSFET
2SK2010
Ultrahigh-Speed Switching Applications
Features
· Low ON resistance. · Ultrahigh-speed swit.
2SK2010 - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID= 4A@ TC=25℃ ·Drain Source Voltage-
: VDSS=250V(Min) ·Fast Switching Speed ·Minimum Lot.
2SK2011 - N-Channel MOSFET
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.
2SK2012 - N-Channel Silicon MOSFET
(Sanyo Semicon Device)
Ordering number:ENN4321B
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2SK2012
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Features
· Low ON-resistance. · Ultrahigh-speed swi.
2SK2015 - Silicon N-Channel MOSFET
(Panasonic)
DiMscaoinntteinnuaendce/PlehattspMe://avwiisnwittwefno.sallenomcweiicn/pDogdlnaiisUs.npccReoaodLnnntapdtamiinslnibasuaouonceinenuoedidtctnde.ilttcnnai.
2SK2016 - Silicon N-Channel Power F-MOS
(Panasonic)
Power F-MOS FETs
2SK2016
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s Features
q Low ON-resistance RDS(on) : RDS(on)1= 0.315Ω(typ) q High-speed switching : tf= 3.
2SK2018-01L - N-channel MOS-FET
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2SK2018-01L,S
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> Features
High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanch.
2SK2018-01S - N-channel MOS-FET
(Fuji Electric)
2SK2018-01L,S
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> Features
High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanch.
