Part number:
2SK2018-01L
Manufacturer:
Fuji Electric
File Size:
214.85 KB
Description:
N-channel mos-fet.
2SK2018-01L Datasheet (214.85 KB)
* High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof N-channel MOS-FET 60V 0,1Ω 10A 20W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics
2SK2018-01L Datasheet (214.85 KB)
2SK2018-01L
Fuji Electric
214.85 KB
N-channel mos-fet.
📁 Related Datasheet
2SK2018-01S N-channel MOS-FET (Fuji Electric)
2SK2010 N-Channel Silicon MOSFET (Sanyo Semicon Device)
2SK2010 N-Channel MOSFET Transistor (Inchange Semiconductor)
2SK2011 N-Channel MOSFET (Sanyo Semicon Device)
2SK2012 N-Channel Silicon MOSFET (Sanyo Semicon Device)
2SK2013 Silicon N Channel MOS Type Field Effect Transistor (Toshiba Semiconductor)
2SK2015 Silicon N-Channel MOSFET (Panasonic)
2SK2016 Silicon N-Channel Power F-MOS (Panasonic)
2SK2019-01 N-channel MOS-FET (Fuji Electric)
2SK2019-01 N-Channel MOSFET Transistor (Inchange Semiconductor)
