2SK2018-01S Datasheet, Mos-fet, Fuji Electric

2SK2018-01S Features

  • Mos-fet High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof N-channel MOS-FET 60V 0,1Ω 10A 20W > Outline Drawing > Applic

PDF File Details

Part number:

2SK2018-01S

Manufacturer:

Fuji Electric

File Size:

214.85kb

Download:

📄 Datasheet

Description:

N-channel mos-fet.

Datasheet Preview: 2SK2018-01S 📥 Download PDF (214.85kb)
Page 2 of 2SK2018-01S

2SK2018-01S Application

  • Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics - Absolute Maximum Ratings

TAGS

2SK2018-01S
N-channel
MOS-FET
Fuji Electric

📁 Related Datasheet

2SK2018-01L - N-channel MOS-FET (Fuji Electric)
2SK2018-01L,S FAP-III Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanch.

2SK2010 - N-Channel Silicon MOSFET (Sanyo Semicon Device)
Ordering number:ENN4319 N-Channel Silicon MOSFET 2SK2010 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed swit.

2SK2010 - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS=250V(Min) ·Fast Switching Speed ·Minimum Lot.

2SK2011 - N-Channel MOSFET (Sanyo Semicon Device)
.

2SK2012 - N-Channel Silicon MOSFET (Sanyo Semicon Device)
Ordering number:ENN4321B N-Channel Silicon MOSFET 2SK2012 Ultrahigh-Speed Switching Applications Features · Low ON-resistance. · Ultrahigh-speed swi.

2SK2013 - Silicon N Channel MOS Type Field Effect Transistor (Toshiba Semiconductor)
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2013 2SK2013 Audio Frequency Power Amplifier Application z High breakdown voltage z H.

2SK2015 - Silicon N-Channel MOSFET (Panasonic)
DiMscaoinntteinnuaendce/PlehattspMe://avwiisnwittwefno.sallenomcweiicn/pDogdlnaiisUs.npccReoaodLnnntapdtamiinslnibasuaouonceinenuoedidtctnde.ilttcnnai.

2SK2016 - Silicon N-Channel Power F-MOS (Panasonic)
Power F-MOS FETs 2SK2016 Silicon N-Channel Power F-MOS s Features q Low ON-resistance RDS(on) : RDS(on)1= 0.315Ω(typ) q High-speed switching : tf= 3.

2SK2019-01 - N-channel MOS-FET (Fuji Electric)
2SK2019-01 FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarante.

2SK2019-01 - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 3.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·Minimum .

Stock and price

part
Fuji Electric Co Ltd
TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,10A I(D),TO-252
Quest Components
2SK2018-01S
1223 In Stock
Qty : 953 units
Unit Price : $0.19
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts