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2SK3130 - N-Channel MOSFET

2SK3130 Description

2SK3130 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3130 Switching Regulator Applications Unit: mm * *

2SK3130 Applications

* Unit: mm
* Reverse-recovery time: trr = 85 ns Built-in high-speed flywheel diode Low drain-source ON resistance: RDS (ON) = 1.12 Ω (typ. ) High forward transfer admittance: |Yfs| = 5.0 S (typ. ) Low leakage current: IDSS = 100 µA (max) (VDS = 6

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N-Channel MOSFET Toshiba Semiconductor
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