Datasheet4U Logo Datasheet4U.com

2SK3130 Datasheet - Toshiba Semiconductor

2SK3130 N-Channel MOSFET

2SK3130 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3130 Switching Regulator Applications Unit: mm Reverse-recovery time: trr = 85 ns Built-in high-speed flywheel diode Low drain-source ON resistance: RDS (ON) = 1.12 Ω (typ.) High forward transfer admittance: |Yfs| = 5.0 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 600 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings .

2SK3130 Datasheet (203.88 KB)

Preview of 2SK3130 PDF
2SK3130 Datasheet Preview Page 2 2SK3130 Datasheet Preview Page 3

Datasheet Details

Part number:

2SK3130

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

203.88 KB

Description:

N-channel mosfet.

📁 Related Datasheet

2SK313 N-Channel MOSFET Transistor (Inchange Semiconductor)

2SK313 Silicon N-Channel MOSFET (Hitachi)

2SK3131 N-Channel MOSFET (Toshiba Semiconductor)

2SK3132 N-Channel MOSFET (Toshiba Semiconductor)

2SK3133 N-Channel MOSFET (Hitachi Semiconductor)

2SK3133L N-Channel MOSFET (Hitachi Semiconductor)

2SK3133S N-Channel MOSFET (Hitachi Semiconductor)

2SK3134 N-Channel MOSFET (Hitachi Semiconductor)

TAGS

2SK3130 N-Channel MOSFET Toshiba Semiconductor

2SK3130 Distributor