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2SK3130 Datasheet - Toshiba Semiconductor

2SK3130 N-Channel MOSFET

2SK3130 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (ฯ€-MOSV) 2SK3130 Switching Regulator Applications Unit: mm Reverse-recovery time: trr = 85 ns Built-in high-speed flywheel diode Low drain-source ON resistance: RDS (ON) = 1.12 โ„ฆ (typ.) High forward transfer admittance: |Yfs| = 5.0 S (typ.) Low leakage current: IDSS = 100 ยตA (max) (VDS = 600 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings .

2SK3130 Datasheet (203.88 KB)

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Datasheet Details

Part number:

2SK3130

Manufacturer:

Toshiba โ†— Semiconductor

File Size:

203.88 KB

Description:

N-channel mosfet.

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2SK3130 N-Channel MOSFET Toshiba Semiconductor

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