2SK3130 Datasheet - Toshiba Semiconductor

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2SK3130 N-Channel MOSFET

2SK3130 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3130 Switching Regulator Applications Unit: mm * *

2SK3130_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

2SK3130

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

203.88 KB

Description:

N-Channel MOSFET

Applications

* Unit: mm
* Reverse-recovery time: trr = 85 ns Built-in high-speed flywheel diode Low drain-source ON resistance: RDS (ON) = 1.12 Ω (typ. ) High forward transfer admittance: |Yfs| = 5.0 S (typ. ) Low leakage current: IDSS = 100 µA (max) (VDS = 6

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2SK3130 N-Channel MOSFET Toshiba Semiconductor

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