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2SK3700 Datasheet - Toshiba Semiconductor

2SK3700 N-Channel MOSFET

2SK3700 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅣ) 2SK3700 Switching Regulator Applications Low drain-source ON-resistance: RDS (ON) = 2.0 Ω (typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 720 V) Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k.

2SK3700-ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

2SK3700

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

222.54 KB

Description:

N-channel mosfet.

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2SK3700 2SK3700 N-Channel MOSFET Toshiba Semiconductor