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A1680 2SA1680

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Description

2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1680 Power Amplifier Applications Power Switching Applications Unit: mm <.

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Features

* oduct or related software or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and tech

Applications

* Power Switching Applications Unit: mm
* Low collector-emitter saturation voltage: VCE (sat) =
* 0.5 V (max) (IC =
* 1 A) High collector power dissipation: PC = 900 mW (Ta = 25 °C) High-speed switching: tstg = 300 ns (typ. ) Complementary to 2SC440

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A1680 2SA1680 Toshiba Semiconductor
Toshiba Semiconductor A1680-like datasheet