2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1680 Power Amplifier Applications Power Switching Applications Unit: mm Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) High collector power dissipation: PC = 900 mW (Ta = 25 °C) High-speed switching: tstg = 300 ns (typ.) Complementary to 2SC4408.
Absolute Maximum Ratings (Ta = 25°C) Characteristics S Collector-base voltage Collector-em
A1680 Features
* oduct or related software or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and tech
A1680-ToshibaSemiconductor.pdf
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A1680
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