2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1680 Power Amplifier Applications Power Switching Applications Unit: mm Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) High collector power dissipation: PC = 900 mW (Ta = 25 °C) High-speed switching: tstg = 300 ns (typ.) Complementary to 2SC4408.
Absolute Maximum Ratings (Ta = 25°C) Characteristics S Collector-base voltage Collector-em