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C5197 Datasheet - Toshiba Semiconductor

C5197 2SC5197

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5197 Power Amplifier Applications 2SC5197 Unit: mm Complementary to 2SA1940 Suitable for use in 55-W high fidelity audio amplifier’s output stage Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ra.

C5197 Datasheet (116.79 KB)

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Datasheet Details

Part number:

C5197

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

116.79 KB

Description:

2sc5197.

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C5197 2SC5197 Toshiba Semiconductor

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