C572 Datasheet - Toshiba Semiconductor

C572 2SC572

2SC752(G)TM TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC752(G)TM Ultra High Speed Switching Applications Computer, Counter Applications Unit: mm High transition frequency: fT = 400 MHz (typ.) Low saturation voltage: VCE (sat) = 0.3 V (max) High speed switching time: tstg = 15 ns (typ.) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipatio.

C572-ToshibaSemiconductor.pdf