D2604 Datasheet - Toshiba Semiconductor

D2604 2SD2604

2SD2604 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington) 2SD2604 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm High DC current gain: hFE = 2000 (min) Low saturation voltage: VCE (sat) = 1.5 V (max) www.DataSheet4U.com Absolute Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperat.

D2604_ToshibaSemiconductor.pdf