D5109 Datasheet - Toshiba Semiconductor

D5109 2SD5109

2SC5109 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5109 For VCO Application Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IB IC PC Tj Tstg Rating 20 10 3 30 60 150 125 -55~125 Unit V V V mA mA mW °C °C JEDEC JEITA TOSHIBA ― SC-59 2-3F1A Electrical Characteristics (Ta = 25°C) C.

D5109-ToshibaSemiconductor.pdf