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DSF01S30SC - Silicon Epitaxial Schottky Barrier Type Diode

DSF01S30SC Description

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type DSF01S30SC DSF01S30SC High-Speed Switching Application Unit: mm 0.1 9±0.02 Abusolute Maximu.

DSF01S30SC Applications

* customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Rel

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Silicon Epitaxial Schottky Barrier Type Diode Toshiba Semiconductor
Toshiba Semiconductor DSF01S30SC-like datasheet