Datasheet4U Logo Datasheet4U.com

DSF05S30CTB Datasheet - Toshiba Semiconductor

DSF05S30CTB Silicon Epitaxial Schottky Barrier Type Diode

DSF05S30CTB TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type DSF05S30CTB High Speed Switching Application Unit: mm 0.25±0.02 0.65±0.02 Absolute Maximum Ratings (Ta = 25°C) 0.7±0.02 1.2±0.05 CATHODE MARK Characteristic Symbol Rating Unit Reverse voltage Average forward current Surge current (10ms) Junction temperature Storage temperature range VR IO IFSM Tj Tstg 30 500＊ 5 125 55 to 125 V mA A °C °C 0.05±0.03 0.8±0.05 0.05±0.03 0.38+-00..0023 : Mounted on a g.

DSF05S30CTB Datasheet (166.33 KB)

Preview of DSF05S30CTB PDF

Datasheet Details

Part number:

DSF05S30CTB

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

166.33 KB

Description:

Silicon epitaxial schottky barrier type diode.

📁 Related Datasheet

DSF05S30U Silicon Epitaxial Schottky Barrier Type Diode (Toshiba Semiconductor)

DSF0.5A Surface Mount Superfast Rectifiers (LGE)

DSF0.5B Surface Mount Superfast Rectifiers (LGE)

DSF0.5C Surface Mount Superfast Rectifiers (LGE)

DSF0.5D Surface Mount Superfast Rectifiers (LGE)

DSF0.5F Surface Mount Superfast Rectifiers (LGE)

DSF0.5G Surface Mount Superfast Rectifiers (LGE)

DSF01S30SC Silicon Epitaxial Schottky Barrier Type Diode (Toshiba Semiconductor)

DSF07S30U Silicon Epitaxial Schottky Barrier Type Diode (Toshiba Semiconductor)

DSF10T 1.0A Power Rectifier (Sanyo Semicon Device)

TAGS

DSF05S30CTB Silicon Epitaxial Schottky Barrier Type Diode Toshiba Semiconductor

Image Gallery

DSF05S30CTB Datasheet Preview Page 2 DSF05S30CTB Datasheet Preview Page 3

DSF05S30CTB Distributor