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HN2A26FS Datasheet - Toshiba Semiconductor

HN2A26FS Frequency General-Purpose Amplifier Applications

HN2A26FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN2A26FS Frequency General-Purpose Amplifier Applications Unit: mm Two devices are incorporated into a fine-pitch, Small-Mold (6-pin) package. High voltage: VCEO = 50 V High current: IC = 100 mA (max) High hFE: hFE = 120 to 400 Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) Lead (Pb) - free +0.02 -0.04 1..

HN2A26FS_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

HN2A26FS

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

169.79 KB

Description:

Frequency general-purpose amplifier applications.

HN2A26FS Distributor

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HN2A26FS HN2A26FS Frequency General-Purpose Amplifier Applications Toshiba Semiconductor