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HN7G10FE Datasheet - Toshiba Semiconductor

HN7G10FE Power Management Switch Applications

HN7G10FE TOSHIBA Multichip Discrete Device www.DataSheet4U.com HN7G10FE Unit: mm Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications Q1 (transistor): 2SC5376F equivalent Q2 (MOSFET): SSM3K03FE equivalent Q1 (transistor) Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Symbol VCBO VCEO VEBO IC IB Rating 15 12 5 400 50 Unit V V V mA mA 1..

HN7G10FE Datasheet (313.07 KB)

Preview of HN7G10FE PDF

Datasheet Details

Part number:

HN7G10FE

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

313.07 KB

Description:

Power management switch applications.

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HN7G10FE Power Management Switch Applications Toshiba Semiconductor

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