HN7G10FE Datasheet (Toshiba Semiconductor) - Power Management Switch Applications

HN7G10FE, Power Management Switch Applications

HN7G10FE TOSHIBA Multichip Discrete Device www.DataSheet4U.com HN7G10FE Unit: mm Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications Q1 (transistor): 2SC5376F equivalent Q2 (MOSFET): SSM3K03FE equivalent Q1 (transistor) Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Symbol VCBO VCEO VEBO IC IB Rating 15 12 5 400 50 Unit V V V mA mA 1.