Datasheet Details
- Part number
- HN7G10FE
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 313.07 KB
- Datasheet
- HN7G10FE_ToshibaSemiconductor.pdf
- Description
- Power Management Switch Applications
HN7G10FE Description
HN7G10FE TOSHIBA Multichip Discrete Device www.DataSheet4U.com HN7G10FE Unit: mm Power Management Switch Applications Driver Circuit Applications In.
HN7G10FE Applications
* Driver Circuit Applications Interface Circuit Applications
* Q1 (transistor): 2SC5376F equivalent Q2 (MOSFET): SSM3K03FE equivalent
Q1 (transistor) Maximum Ratings (Ta = 25°C)
Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Ba
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