HN7G10FE Power Management Switch Applications

Toshiba Semiconductor

Description

HN7G10FE TOSHIBA Multichip Discrete Device www.DataSheet4U.com HN7G10FE Unit: mm Power Management Switch Applications Driver Circuit Applications In.

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Datasheet Specifications

Part number: HN7G10FE
Manufacturer: Toshiba ↗ Semiconductor
File Size: 313.07 KB
Datasheet: HN7G10FE_ToshibaSemiconductor.pdf
Description: Power Management Switch Applications

Applications

* Driver Circuit Applications Interface Circuit Applications
* Q1 (transistor): 2SC5376F equivalent Q2 (MOSFET): SSM3K03FE equivalent Q1 (transistor) Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Ba

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HN7G10FE Power Management Switch Applications Toshiba Semiconductor

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