JDP2S04E Datasheet (Toshiba Semiconductor) - VHF~UHF Band RF Attenuator Applications

JDP2S04E, VHF~UHF Band RF Attenuator Applications

JDP2S04E TOSHIBA Diode Silicon Epitaxial Pin Type JDP2S04E VHF~UHF Band RF Attenuator Applications Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages.

Low capacitance ratio: CT = 0.25 pF (typ.) Low series resistance: rs = 3 Ω (typ.) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Forward current Junction temperature Storage temperature range Symbol VR IF Tj Tstg Rating 50 50 125 -55~125 Unit V mA °