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JDP2S04E Datasheet - Toshiba Semiconductor

JDP2S04E VHF~UHF Band RF Attenuator Applications

JDP2S04E TOSHIBA Diode Silicon Epitaxial Pin Type JDP2S04E VHF~UHF Band RF Attenuator Applications Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. Low capacitance ratio: CT = 0.25 pF (typ.) Low series resistance: rs = 3 Ω (typ.) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Forward current Junction temperature Storage temperature range Symbol VR IF Tj Tstg Rating 50 50 125 -55~125 Unit V mA °.

JDP2S04E Datasheet (97.17 KB)

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Datasheet Details

Part number:

JDP2S04E

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

97.17 KB

Description:

Vhf~uhf band rf attenuator applications.

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JDP2S04E VHF ~UHF Band Attenuator Applications Toshiba Semiconductor

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