K11A60D Datasheet - Toshiba Semiconductor

K11A60D, TK11A60D

TK11A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS VII) TK11A60D Switching Regulator Applications * Low drain-source .

datasheet Preview Page 1 from Datasheet4u.com

K11A60D-ToshibaSemiconductor.pdf

K11A60D Datasheet Preview — Preview of K11A60D PDF

Datasheet Details

Part number:

K11A60D

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

189.27 KB

Description:

TK11A60D

Features

* nuclear facilities, equipment used in the aer

Applications

* Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ. )
* High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ. )
* Low leakage current: IDSS = 10 μA (max) (VDS = 600 V)
* Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratin

K11A60D Distributors

📁 Related Datasheet

K1100BA K1100F K1100y K1101 K1102-01MR K11041

📌 All Tags

K11A60D TK11A60D Toshiba Semiconductor

Toshiba Semiconductor K11A60D-like datasheet