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K11A60D TK11A60D

K11A60D Description

TK11A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS VII) TK11A60D Switching Regulator Applications * Low drain-source .

K11A60D Features

* nuclear facilities, equipment used in the aer

K11A60D Applications

* Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ. )
* High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ. )
* Low leakage current: IDSS = 10 μA (max) (VDS = 600 V)
* Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratin

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TK11A60D Toshiba Semiconductor
Toshiba Semiconductor K11A60D-like datasheet