K12A50D Datasheet - Toshiba Semiconductor

K12A50D, TK12A50D

TK12A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK12A50D Switching Regulator Applications * * * .

Applications

* Low drain-source ON-resistance: RDS (ON) = 0.45 Ω (typ. ) High forward transfer admittance: |Yfs| = 6.0 S (typ. ) Low leakage current: IDSS = 10 μA (VDS = 500 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta

K12A50D_ToshibaSemiconductor.pdf