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K12A60U Datasheet - Toshiba Semiconductor

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K12A60U TK12A60U

www.DataSheet4U.com TK12A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOSⅡ) TK12A60U Switching Regulator Applications .

K12A60U_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

K12A60U

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

206.69 KB

Description:

TK12A60U

Features

* equipment used in nuclear facilities, equipment used in the aerospace indu

Applications

* Low drain-source ON-resistance : RDS (ON) = 0.36 Ω (typ. ) High forward transfer admittance : ⎪Yfs⎪ = 7.0 S (typ. ) Low leakage current: IDSS = 100 μA (VDS = 600 V) Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (

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