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K12A60U Datasheet - Toshiba Semiconductor

K12A60U_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

K12A60U

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

206.69 KB

Description:

Tk12a60u.

K12A60U, TK12A60U

www.DataSheet4U.com TK12A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOSⅡ) TK12A60U Switching Regulator Applications Low drain-source ON-resistance : RDS (ON) = 0.36 Ω (typ.) High forward transfer admittance : ⎪Yfs⎪ = 7.0 S (typ.) Low leakage current: IDSS = 100 μA (VDS = 600 V) Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate

K12A60U Features

* equipment used in nuclear facilities, equipment used in the aerospace indu

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Toshiba Semiconductor K12A60U-like datasheet