K12A60W
K12A60W is N-Channel 650V Power MOSFET manufactured by VBsemi.
FEATURES
- Low figure-of-merit (FOM) Ron x Qg
- Low input capacitance (Ciss)
- Reduced switching and conduction losses
- Ultra low gate charge (Qg)
- Avalanche energy rated (UIS)
Available
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current a
VGS at 10 V
TC = 25 °C TC = 100 °C
Linear Derating Factor
Single Pulse Avalanche Energy b
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Drain-Source Voltage Slope Reverse Diode d V/dt d
TJ = 125 °C
Soldering Remendations (Peak Temperature) c for 10 s
VDS VGS ID IDM
EAS PD TJ, Tstg d V/dt
Notes a. Repetitive rating; pulse width limited by maximum junction temperature. b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 m H, Rg = 25 Ω, IAS = 7 A. c. 1.6 mm from case. d. ISD ≤ ID, d I/dt = 100 A/μs, starting TJ = 25 °C.
LIMIT 650 ± 30 20 13 56 1.8 691 30
-55 to +150 70 26 300
UNIT V A
W/°C m J W °C V/ns °C
K12A60W-VB
.VBsemi.
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain)
Rth JA Rth...
