K1930 Datasheet - Toshiba Semiconductor

K1930 2SK1930

2SK1930 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSII.5) 2SK1930 Chopper Regulator, DC DC Converter, and Motor Drive Applications Unit: mm l Low drain source ON resistance : RDS (ON) = 3.0 Ω (typ.) l High forward transfer admittance : |Yfs| = 2.0 S (typ.) l Low leakage current : IDSS = 300 µA (max) (VDS = 800 V) l Enhancement mode : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain source .

K1930-ToshibaSemiconductor.pdf