K2013 Datasheet, 2sk2013, Toshiba Semiconductor

PDF File Details

Part number:

K2013

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

258.89kb

Download:

📄 Datasheet

Description:

2sk2013.

K2013 Application

• Applications including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evalua

TAGS

K2013

Toshiba Semiconductor

📁 Related Datasheet

K201 - Photocoupler(These Photocouplers consist of two Gallium Arsenide Infrared Emitting) (KODENSHI KOREA CORP)
Photocoupler K201 • K202 • K204 These Photocouplers consist of two Gallium Arsenide Infrared Emitting Diodes connected in a reverse-paralled configur.

K2010 - 6PIN PHOTOTRANSISTOR PHOTOCOUPLER (Cosmo)
.

K2011 - 2SK2011 (Sanyo Semicon Device)
.. .. .. .

K2011 - IF filter (ETC)
.. К2011 4x2.54 IF filter for intercarrier application (IF= 38.0 MHz. standard B/G-CCIR, D/K-OIRT) 2.6 8.6max 2 3 4 5 6 2 5 18..

K2012 - N-Channel Silicon MOSFET (Sanyo Semicon Device)
Ordering number:ENN4321B N-Channel Silicon MOSFET 2SK2012 Ultrahigh-Speed Switching Applications Features · Low ON-resistance. · Ultrahigh-speed swi.

K2015 - Silicon N-Channel F-MOS FET (Panasonic)
DiMscaoinntteinnuaendce/PlehattspMe://avwiisnwittwefno.sallenomcweiicn/pDogdlnaiisUs.npccReoaodLnnntapdtamiinslnibasuaouonceinenuoedidtctnde.ilttcnnai.

K2016 - Silicon N-Channel Power F-MOS (Panasonic)
Power F-MOS FETs 2SK2016 Silicon N-Channel Power F-MOS s Features q Low ON-resistance RDS(on) : RDS(on)1= 0.315Ω(typ) q High-speed switching : tf= 3.

K2000-R - 2SK2000-R (Fuji Electric)
.. .. .. .. .. .. .. .

K2000EH70 - High Energy Bidirectional SIDACs (Littelfuse)
Kxxx0yH Series Teccor® brand Thyristors High Energy Bidirectional SIDACs RoHS Schematic Symbol Description The new Kxxx0yH is a higher energy SIDA.

K2000G - Sidac (JIEJIE)
JIEJIE MICROELECTRONICS CO. , Ltd K0900G Series Sidac Rev.1.0 DESCRIPTION: The sidac is a silicon bilateral voltage triggered switch with greater p.