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K2013 Datasheet - Toshiba Semiconductor

K2013 2SK2013

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2013 2SK2013 Audio Frequency Power Amplifier Application z High breakdown voltage z High forward transfer admittance z Complementary to 2SJ313 : VDSS = 180V : |Yfs| = 0.7 S (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain source voltage Gate source voltage Drain current (Note 2) Drain power dissipation (Tc = 25°C) Channel temperature Storage temperature range VDSS VG.

K2013-ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

K2013

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

258.89 KB

Description:

2sk2013.

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