K20J60U Datasheet - Toshiba Semiconductor

K20J60U TK20J60U

TK20J60Uwww.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS ) TK20J60U Switching Regulator Applications Low drain-source ON resistance: RDS (ON) = 0.165 (typ.) High forward transfer admittance: ⎪Yfs⎪ = 12 S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V) Enhancement-mode: Vth = 3.0~5.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain.

K20J60U Datasheet (215.75 KB)