K2312 Datasheet - Toshiba Semiconductor

K2312 2SK2312

2SK2312 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L π MOSV) 2 2SK2312 Chopper Regulator, DC DC Converter and Motor Drive Applications z 4-V gate drive z Low drain source ON resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 13 mΩ (typ.) : |Yfs| = 40 S (typ.) Unit: mm : IDSS = 100 μA (max) (VDS = 60 V) : Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characterist.

K2312 Features

* nclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2009-09-29

K2312-ToshibaSemiconductor.pdf