K2961 Datasheet - Toshiba Semiconductor

K2961 2SK2961

2SK2961 www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L π MOSV) 2 2SK2961 Relay Drive, Motor Drive and DC DC Converter Application Unit: mm z Low drain source ON resistance z High forward transfer admittance : RDS (ON) = 0.2 Ω (typ.) : |Yfs| = 2.0 S (typ.) z Low leakage current : IDSS = 100 μA (VDS = 60 V) z Enhancement mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drai.

K2961_ToshibaSemiconductor.pdf