K2967 Datasheet - Toshiba Semiconductor

K2967 2SK2967

2SK2967 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSV) 2SK2967 DC DC Converter, Relay Drive and Motor Drive Applications z Low drain source ON resistance z High forward transfer admittance : RDS (ON) = 48 mΩ (typ.) : |Yfs| = 30 S (typ.) Unit: mm z Low leakage current : IDSS = 100 μA (max) (VDS = 250 V) z Enhancement mode : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA) www.DataSheet4U.com Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain .

K2967_ToshibaSemiconductor.pdf