K3310 Datasheet - Toshiba Semiconductor

K3310 - 2SK3310

2SK3310 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3310 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.48 Ω (typ.) High forward transfer admittance: |Yfs| = 4.3 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 450 V) Enhancement model: Vth = 3.0~5.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gat.

K3310-ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

K3310

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

204.20 KB

Description:

2sk3310.

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K3310 2SK3310 Toshiba Semiconductor