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K4A60DB TK4A60DB

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Description

TK4A60DB TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK4A60DB Switching Regulator Applications * Low drain-source ON-.

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Features

* ment, equipment use

Applications

* Low drain-source ON-resistance: RDS (ON) = 1.6Ω(typ. )
* High forward transfer admittance: |Yfs| = 2.2 S (typ. )
* Low leakage current: IDSS = 10 μA (max) (VDS = 600V)
* Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) Ф3.2 ± 0.2 10 ± 0.3 A Unit: mm 2.7

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TK4A60DB Toshiba Semiconductor
Toshiba Semiconductor K4A60DB-like datasheet