Datasheet Details
- Part number
- K4A60DB
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 256.86 KB
- Datasheet
- K4A60DB-ToshibaSemiconductor.pdf
- Description
- TK4A60DB
K4A60DB Description
TK4A60DB TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK4A60DB Switching Regulator Applications * Low drain-source ON-.
K4A60DB Features
* ment, equipment use
K4A60DB Applications
* Low drain-source ON-resistance: RDS (ON) = 1.6Ω(typ. )
* High forward transfer admittance: |Yfs| = 2.2 S (typ. )
* Low leakage current: IDSS = 10 μA (max) (VDS = 600V)
* Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)
Ф3.2 ± 0.2 10 ± 0.3
A
Unit: mm
2.7
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