K4A60DA
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K4A60DB - TK4A60DB
(Toshiba Semiconductor)
TK4A60DB
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK4A60DB
Switching Regulator Applications
• Low drain-source ON-resistan.
K4A4G045WD - 4Gb D-die DDR4 SDRAM
(Samsung)
Rev. 1.1, Feb. 2014
K4A4G045WD K4A4G085WD
4Gb D-die DDR4 SDRAM
78FBGA with Lead-Free & Halogen-Free (RoHS pliant)
1.2V
datasheet SAMSUNG ELECTR.
K4A4G045WE - 4Gb E-die DDR4 SDRAM
(Samsung)
Rev. 1.6, Jan. 2017
K4A4G045WE K4A4G085WE
4Gb E-die DDR4 SDRAM
78FBGA with Lead-Free & Halogen-Free
(RoHS pliant)
1.2V
datasheet SAMSUNG ELECT.
K4A4G085WD - 4Gb D-die DDR4 SDRAM
(Samsung)
Rev. 1.1, Feb. 2014
K4A4G045WD K4A4G085WD
4Gb D-die DDR4 SDRAM
78FBGA with Lead-Free & Halogen-Free (RoHS pliant)
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K4A4G085WE - 4Gb E-die DDR4 SDRAM
(Samsung)
Rev. 1.6, Jan. 2017
K4A4G045WE K4A4G085WE
4Gb E-die DDR4 SDRAM
78FBGA with Lead-Free & Halogen-Free
(RoHS pliant)
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K4A4G165WD - 4Gb D-die DDR4 SDRAM
(Samsung)
Rev. 0.5, Feb. 2014 K4A4G165WD
Preliminary
4Gb D-die DDR4 SDRAM x16 only
96FBGA with Lead-Free & Halogen-Free (RoHS pliant)
1.2V
CAUTION : Thi.
K4A4G165WE - 4Gb E-die DDR4 SDRAM
(Samsung)
Rev. 1.4, Jun. 2016 K4A4G165WE
4Gb E-die DDR4 SDRAM x16 only
96FBGA with Lead-Free & Halogen-Free
(RoHS pliant)
1.2V
datasheet
SAMSUNG ELECTRO.
K4A4G165WF - 4Gb F-die DDR4 SDRAM
(Samsung)
Rev. 0.9, Sep. 2018 K4A4G165WF
Preliminary
4Gb F-die DDR4 SDRAM x16 only
96FBGA with Lead-Free & Halogen-Free
(RoHS pliant)
1.2V
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SA.
K4A8G045WB - 8Gb B-die DDR4 SDRAM
(Samsung)
Rev. 2.1, Feb. 2017
K4A8G045WB K4A8G085WB
8Gb B-die DDR4 SDRAM
78FBGA with Lead-Free & Halogen-Free (RoHS pliant)
1.2V
datasheet
SAMSUNG ELECTR.
K4A8G085WB - 8Gb B-die DDR4 SDRAM
(Samsung)
Rev. 2.1, Feb. 2017
K4A8G045WB K4A8G085WB
8Gb B-die DDR4 SDRAM
78FBGA with Lead-Free & Halogen-Free (RoHS pliant)
1.2V
datasheet
SAMSUNG ELECTR.