MG300Q2YS61 Datasheet (Toshiba Semiconductor) - High Power Switching Applications Motor Control Applications

MG300Q2YS61, High Power Switching Applications Motor Control Applications

www.DataSheet4U.com MG300Q2YS61 TOSHIBA IGBT Module Silicon N Channel IGBT MG300Q2YS61 High Power Switching Applications Motor Control Applications High input impedance High speed: tf = 0.3 µs (max) Inductive load Low saturation voltage: VCE (sat) = 2.6 V (max) Enhancement-mode Includes a complete half bridge in one package.

The electrodes are isolated from case.

Unit: mm Equivalent Circuit C1 G1 JEDEC E1 E1/C2 ― ― 2-109C4A JEITA TOSHIBA G2 E2 E2 Weig