MG300Q2YS61 Datasheet - Toshiba Semiconductor

MG300Q2YS61 High Power Switching Applications Motor Control Applications

www.DataSheet4U.com MG300Q2YS61 TOSHIBA IGBT Module Silicon N Channel IGBT MG300Q2YS61 High Power Switching Applications Motor Control Applications High input impedance High speed: tf = 0.3 µs (max) Inductive load Low saturation voltage: VCE (sat) = 2.6 V (max) Enhancement-mode Includes a complete half bridge in one package. The electrodes are isolated from case. Unit: mm Equivalent Circuit C1 G1 JEDEC E1 E1/C2 ― ― 2-109C4A JEITA TOSHIBA G2 E2 E2 Weig.

MG300Q2YS61 Datasheet (269.93 KB)

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Datasheet Details

Part number:

MG300Q2YS61

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

269.93 KB

Description:

High power switching applications motor control applications.

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