Datasheet Specifications
- Part number
- MG300Q2YS65H
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 190.61 KB
- Datasheet
- MG300Q2YS65H_ToshibaSemiconductor.pdf
- Description
- IGBT Module Silicon N Channel IGBT
Description
www.DataSheet4U.com MG300Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT MG300Q2YS65H High Power & High Speed Switching Applications * * .
Applications
* High input impedance Enhancement-mode The electrodes are isolated from case. Unit: mm Equivalent Circuit E1 E2 C1 E2 G1 E1/C2 G2 JEDEC JEITA TOSHIBA ― ― 2-109C4A Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DCMG300Q2YS65H Distributors
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