MG300Q2YS65H IGBT Module Silicon N Channel IGBT

Toshiba Semiconductor

Description

www.DataSheet4U.com MG300Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT MG300Q2YS65H High Power & High Speed Switching Applications * * .

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Datasheet Specifications

Part number: MG300Q2YS65H
Manufacturer: Toshiba ↗ Semiconductor
File Size: 190.61 KB
Datasheet: MG300Q2YS65H_ToshibaSemiconductor.pdf
Description: IGBT Module Silicon N Channel IGBT

Applications

* High input impedance Enhancement-mode The electrodes are isolated from case. Unit: mm Equivalent Circuit E1 E2 C1 E2 G1 E1/C2 G2 JEDEC JEITA TOSHIBA ― ― 2-109C4A Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC

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📌 All Tags

IGBT Module Silicon Channel IGBT Toshiba Semiconductor

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