MG300Q2YS65H Datasheet (Toshiba Semiconductor) - IGBT Module Silicon N Channel IGBT

MG300Q2YS65H, IGBT Module Silicon N Channel IGBT

www.DataSheet4U.com MG300Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT MG300Q2YS65H High Power & High Speed Switching Applications High input impedance Enhancement-mode The electrodes are isolated from case.

Unit: mm Equivalent Circuit E1 E2 C1 E2 G1 E1/C2 G2 JEDEC JEITA TOSHIBA ― ― 2-109C4A Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1 ms DC 1 ms Symbol VCES VGES IC ICP IF IFM PC Tj Tstg VIsol T