MG600Q1US61 Datasheet (Toshiba Semiconductor) - IGBT Module Silicon N Channel IGBT

MG600Q1US61, IGBT Module Silicon N Channel IGBT

www.DataSheet4U.com MG600Q1US61 TOSHIBA IGBT Module Silicon N Channel IGBT MG600Q1US61 High Power Switching Applications Motor Control Applications High input impedance High speed: tf = 0.3 µs (max) Inductive load Low saturation voltage: VCE (sat) = 2.6 V (max) The electrodes are isolated from case.

Enhancement-mode Unit: mm Equivalent Circuit C G E E JEDEC JEITA TOSHIBA Weight: 465 g (typ.) ― ― 2-109F1A Maximum Ratings (Tc = 25°C) Characteristics Collector-e