MG600Q1US61 IGBT Module Silicon N Channel IGBT

Toshiba Semiconductor

Description

www.DataSheet4U.com MG600Q1US61 TOSHIBA IGBT Module Silicon N Channel IGBT MG600Q1US61 High Power Switching Applications Motor Control Applications .

📥 Download Datasheet

MG600Q1US61 Datasheet Preview — Preview of MG600Q1US61 PDF

Datasheet Specifications

Part number: MG600Q1US61
Manufacturer: Toshiba ↗ Semiconductor
File Size: 263.60 KB
Datasheet: MG600Q1US61_ToshibaSemiconductor.pdf
Description: IGBT Module Silicon N Channel IGBT

Applications

* Motor Control Applications
* High input impedance High speed: tf = 0.3 µs (max) Inductive load Low saturation voltage: VCE (sat) = 2.6 V (max) The electrodes are isolated from case. Enhancement-mode Unit: mm Equivalent Circuit C G E E JEDEC JEITA TOSHIBA Weight: 465 g

MG600Q1US61 Distributors

📁 Related Datasheet

MG600Q1US41 MG600Q1US51 MG600Q1US59A MG600 MG600J1US51 MG600J2YS60A

📌 All Tags

MG600Q1US61 IGBT Module Silicon Channel IGBT Toshiba Semiconductor

Toshiba Semiconductor MG600Q1US61-like datasheet

MG600Q2YS60A