Part number:
MG600Q1US61
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
263.60 KB
Description:
Igbt module silicon n channel igbt.
MG600Q1US61_ToshibaSemiconductor.pdf
Datasheet Details
Part number:
MG600Q1US61
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
263.60 KB
Description:
Igbt module silicon n channel igbt.
MG600Q1US61, IGBT Module Silicon N Channel IGBT
www.DataSheet4U.com MG600Q1US61 TOSHIBA IGBT Module Silicon N Channel IGBT MG600Q1US61 High Power Switching Applications Motor Control Applications High input impedance High speed: tf = 0.3 µs (max) Inductive load Low saturation voltage: VCE (sat) = 2.6 V (max) The electrodes are isolated from case.
Enhancement-mode Unit: mm Equivalent Circuit C G E E JEDEC JEITA TOSHIBA Weight: 465 g (typ.) ― ― 2-109F1A Maximum Ratings (Tc = 25°C) Characteristics Collector-e
📁 Related Datasheet
📌 All Tags