MG600Q1US61 Datasheet - Toshiba Semiconductor

MG600Q1US61 IGBT Module Silicon N Channel IGBT

www.DataSheet4U.com MG600Q1US61 TOSHIBA IGBT Module Silicon N Channel IGBT MG600Q1US61 High Power Switching Applications Motor Control Applications High input impedance High speed: tf = 0.3 µs (max) Inductive load Low saturation voltage: VCE (sat) = 2.6 V (max) The electrodes are isolated from case. Enhancement-mode Unit: mm Equivalent Circuit C G E E JEDEC JEITA TOSHIBA Weight: 465 g (typ.) ― ― 2-109F1A Maximum Ratings (Tc = 25°C) Characteristics Collector-e.

MG600Q1US61 Datasheet (263.60 KB)

MG600Q1US61 Datasheet Preview — Preview of MG600Q1US61 PDF

Datasheet Details

Part number:

MG600Q1US61

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

263.60 KB

Description:

Igbt module silicon n channel igbt.

📁 Related Datasheet

MG600Q1US41 N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS) (Toshiba)

MG600Q1US51 N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS) (Toshiba)

MG600Q1US59A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS (Mitsubishi Electric)

MG600Q2YS60A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS (Toshiba Semiconductor)

MG600Q2YS60A High Power Switching Applications Motor Control Applications (Mitsubishi Electric)

MG600 N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS) (Toshiba)

MG600J1US51 N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS) (Toshiba)

MG600J2YS60A TOSHIBA IGBT Module Silicon N Channel IGBT (Toshiba)

MG600J2YS61A High Power Switching Applications Motor Control Applications (Mitsubishi Electric)

MG60M1AL1 GTR Module (ETC)

TAGS

MG600Q1US61 IGBT Module Silicon Channel IGBT Toshiba Semiconductor

Image Gallery

MG600Q1US61 Distributor