MG600Q1US61 Datasheet - Toshiba Semiconductor

MG600Q1US61 IGBT Module Silicon N Channel IGBT

www.DataSheet4U.com MG600Q1US61 TOSHIBA IGBT Module Silicon N Channel IGBT MG600Q1US61 High Power Switching Applications Motor Control Applications High input impedance High speed: tf = 0.3 µs (max) Inductive load Low saturation voltage: VCE (sat) = 2.6 V (max) The electrodes are isolated from case. Enhancement-mode Unit: mm Equivalent Circuit C G E E JEDEC JEITA TOSHIBA Weight: 465 g (typ.) ― ― 2-109F1A Maximum Ratings (Tc = 25°C) Characteristics Collector-e.

MG600Q1US61_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

MG600Q1US61

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

263.60 KB

Description:

Igbt module silicon n channel igbt.

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MG600Q1US61 MG600Q1US61 IGBT Module Silicon Channel IGBT Toshiba Semiconductor