Datasheet4U Logo Datasheet4U.com

MG600Q1US61 Datasheet - Toshiba Semiconductor

MG600Q1US61_ToshibaSemiconductor.pdf

Preview of MG600Q1US61 PDF
MG600Q1US61 Datasheet Preview Page 2 MG600Q1US61 Datasheet Preview Page 3

Datasheet Details

Part number:

MG600Q1US61

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

263.60 KB

Description:

Igbt module silicon n channel igbt.

MG600Q1US61, IGBT Module Silicon N Channel IGBT

www.DataSheet4U.com MG600Q1US61 TOSHIBA IGBT Module Silicon N Channel IGBT MG600Q1US61 High Power Switching Applications Motor Control Applications High input impedance High speed: tf = 0.3 µs (max) Inductive load Low saturation voltage: VCE (sat) = 2.6 V (max) The electrodes are isolated from case.

Enhancement-mode Unit: mm Equivalent Circuit C G E E JEDEC JEITA TOSHIBA Weight: 465 g (typ.) ― ― 2-109F1A Maximum Ratings (Tc = 25°C) Characteristics Collector-e

📁 Related Datasheet

📌 All Tags

Toshiba Semiconductor MG600Q1US61-like datasheet