MP6759 Datasheet (Toshiba Semiconductor)

MP6759, Silicon N-Channel IGBT

MP6759 TOSHIBA GTR Module Silicon N Channel IGBT MP6759 Motor Control Applications High Power Switching Applications Unit: mm The electrodes are isolated from case.

6 IGBTs are built into 1 package.

Enhancement-mode Low saturation voltage : VCE (sat) = 2.7 V (max) (IC = 10 A) High speed: tf = 0.35 µs (max) (IC = 10 A) JEDEC JEITA TOSHIBA ― ― 2-78A1A Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC