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MP6759 Silicon N-Channel IGBT

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Description

MP6759 TOSHIBA GTR Module Silicon N Channel IGBT MP6759 Motor Control Applications High Power Switching Applications Unit: mm * * * .

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Applications

* High Power Switching Applications Unit: mm
* The electrodes are isolated from case. 6 IGBTs are built into 1 package. Enhancement-mode Low saturation voltage : VCE (sat) = 2.7 V (max) (IC = 10 A) High speed: tf = 0.35 µs (max) (IC = 10 A) JEDEC JEITA TOSHIBA ― ― 2-78A

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MP6759 Silicon N-Channel IGBT Toshiba Semiconductor
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