TC55257BTRL Features
* with an operating current of 5mNMHz fup.) and a minimum cycle time of 85ns. When CE is a logical high, the device is placed in a low power standby mode in which the standby current is 10Q.lA. The TC55257BPL has two control inputs. Chip enable (CE) allows for device selection and data retention contr
TC55257BFL_ToshibaSemiconductor.pdf
Datasheet Details
TC55257BTRL, TC55257BFL
Toshiba ↗ Semiconductor
224.98 KB
Silicon gate cmos static ram.
This datasheet PDF includes multiple part numbers: TC55257BTRL, TC55257BFL.
Please refer to the document for exact specifications by model.
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TC55257BTRL Distributor
