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TC55V16256FTI-12 Datasheet - Toshiba Semiconductor

TC55V16256FTI-12 MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

The TC55V16256JI/FTI is a 4,194,304-bit high-speed static random access memory (SRAM) organized as 262,144 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it operates from a single 3.3 V power supply. Chip enable ( CE ) can be used to place t.

TC55V16256FTI-12 Features

* Fast access time (the following are maximum values) TC55V16256JI/FTI-12:12 ns TC55V16256JI/FTI-15:15 ns Low-power dissipation (the following are maximum values) Cycle Time Operation (max) 12 230 15 200 20 170 25 150 ns mA

TC55V16256FTI-12_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

TC55V16256FTI-12

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

223.48 KB

Description:

Mos digital integrated circuit silicon gate cmos.

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TC55V16256FTI-12 TC55V16256FTI-12 MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS Toshiba Semiconductor

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