TC55V16256FTI-12 - MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

Toshiba Semiconductor

Datasheet Details

Part number	TC55V16256FTI-12
Manufacturer	Toshiba ↗ Semiconductor
File Size	223.48 KB
Description	MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
Datasheet	TC55V16256FTI-12_ToshibaSemiconductor.pdf

The TC55V16256JI/FTI is a 4,194,304-bit high-speed static random access memory (SRAM) organized as 262,144 words by 16 bits.

Fast access time (the following are maximum values) TC55V16256JI/FTI-12:12 ns TC55V16256JI/FTI-15:15 ns Low-power dissipation (the following are maximum values) Cycle Time Operation (max) 12 230 15 200 20 170 25 150 ns mA.
Standby:10 mA (both devices) Single power supply voltage of 3.3 V ± 0.3 V Fully static operation All inputs and outputs are LVTTL compatible Output buffer control using OE Data byte control usin.

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Published: Jan 18, 2009 |