TC55V16256FTI-12 MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

Toshiba Semiconductor

Description

TC55V16256JI/FTI-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT CMOS STATIC RAM .
The TC55V16256JI/FTI is a 4,194,304-bit high-speed static random access memory (SRAM) organized as 262,144 words by 16 bits.

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Datasheet Specifications

Part number: TC55V16256FTI-12
Manufacturer: Toshiba ↗ Semiconductor
File Size: 223.48 KB
Datasheet: TC55V16256FTI-12_ToshibaSemiconductor.pdf
Description: MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

Features

* Fast access time (the following are maximum values) TC55V16256JI/FTI-12:12 ns TC55V16256JI/FTI-15:15 ns Low-power dissipation (the following are maximum values) Cycle Time Operation (max) 12 230 15 200 20 170 25 150 ns mA

Applications

* where high-speed access and high-speed storage are required. All inputs and outputs are directly LVTTL compatible. The TC55V16256JI/FTI is available in plastic 44-pin SOJ and 44-pin TSOP with 400mil width for high density surface assembly. The TC55V16256JI/FTI guarantees
* 40° to 85°C operati

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📁 Related Datasheet

TC55V16648BFT-10 TC55V16648BFT-12 TC55V16648BFT-15 TC55V16648BJ-10 TC55V16648BJ-12 TC55V16648BJ-15

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TC55V16256FTI-12 MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS Toshiba Semiconductor

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