Datasheet Details
Part number:
TC55V16256FTI-12
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
223.48 KB
Description:
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
Features
* Fast access time (the following are maximum values) TC55V16256JI/FTI-12:12 ns TC55V16256JI/FTI-15:15 ns Low-power dissipation (the following are maximum values) Cycle Time Operation (max) 12 230 15 200 20 170 25 150 ns mA
TC55V16256FTI-12_ToshibaSemiconductor.pdf
TC55V16256FTI-12, MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
The TC55V16256JI/FTI is a 4,194,304-bit high-speed static random access memory (SRAM) organized as 262,144 words by 16 bits.
Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it operates from a single 3.3 V power supply.
Chip enable ( CE ) can be used to place t
TC55V16256FTI-12 Distributor
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