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TC55V16256FTI-15, TC55V16256FTI-12 Datasheet - Toshiba Semiconductor

Datasheet Details

Part number:

TC55V16256FTI-15, TC55V16256FTI-12

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

223.48 KB

Description:

MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

Note:

This datasheet PDF includes multiple part numbers: TC55V16256FTI-15, TC55V16256FTI-12.
Please refer to the document for exact specifications by model.

Features

* Fast access time (the following are maximum values) TC55V16256JI/FTI-12:12 ns TC55V16256JI/FTI-15:15 ns Low-power dissipation (the following are maximum values) Cycle Time Operation (max) 12 230 15 200 20 170 25 150 ns mA

TC55V16256FTI-12_ToshibaSemiconductor.pdf

This datasheet PDF includes multiple part numbers: TC55V16256FTI-15, TC55V16256FTI-12. Please refer to the document for exact specifications by model.
TC55V16256FTI-15 Datasheet Preview Page 2 TC55V16256FTI-15 Datasheet Preview Page 3

TC55V16256FTI-15, TC55V16256FTI-12, MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

The TC55V16256JI/FTI is a 4,194,304-bit high-speed static random access memory (SRAM) organized as 262,144 words by 16 bits.

Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it operates from a single 3.3 V power supply.

Chip enable ( CE ) can be used to place t

TC55V16256FTI-15 Distributor

📁 Related Datasheet

TC55V16648BFT-10 TC55V16648BFT-12 TC55V16648BFT-15 TC55V16648BJ-10 TC55V16648BJ-12 TC55V16648BJ-15

📌 All Tags

TC55V16256FTI-12 MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS Toshiba Semiconductor
Toshiba Semiconductor TC55V16256FTI-15-like datasheet
TC55V16256FTI-12
TC55V16256FT-12
TC55V16256FT-15
TC55V16256J-12
TC55V16256J-15