TIM3742-16SL-341 MICROWAVE POWER GaAs FET

Toshiba Semiconductor

Description

www.DataSheet4U.com MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM3742-16SL-341 TECHNICAL DATA .

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Datasheet Specifications

Part number: TIM3742-16SL-341
Manufacturer: Toshiba ↗ Semiconductor
File Size: 98.67 KB
Datasheet: TIM3742-16SL-341_ToshibaSemiconductor.pdf
Description: MICROWAVE POWER GaAs FET

Features

* LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 31.5dBm Single Carrier Level
* HIGH POWER P1dB=42.5dBm at 3.3GHz to 3.6GHz
* HIGH GAIN G1dB=10.0dB at 3.3GHz to 3.6GHz
* BROAD BAND INTERNALLY MATCHED FET
* HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECI

Applications

* of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is

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TIM3742-16SL-341 MICROWAVE POWER GaAs FET Toshiba Semiconductor

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