Datasheet Specifications
- Part number
- TIM3742-25UL
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 74.38 KB
- Datasheet
- TIM3742-25UL_ToshibaSemiconductor.pdf
- Description
- MICROWAVE POWER GaAs FET
Description
MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM3742-25UL TECHNICAL DATA .
Features
* n HIGH POWER P1dB=44.5dBm at 3.7GHz to 4.2GHz n HIGH GAIN G1dB=10.5dB at 3.7GHz to 4.2GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression PointApplications
* of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein isTIM3742-25UL Distributors
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