* (1) (2) (3) (4) AEC-Q101 qualified Low drain-source on-resistance: RDS(ON) = 4.8 mΩ (typ.) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source
TJ60S04M3L Datasheet (242.83 KB)
TJ60S04M3L
Toshiba ↗ Semiconductor
242.83 KB
Mosfets.
TJ60S04M3L MOSFETs Silicon P-Channel MOS (U-MOS) TJ60S04M3L 1. Applications Automotive Motor Drivers DC-DC C.
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