TJ60S04M3L MOSFETs

Toshiba Semiconductor

Description

TJ60S04M3L MOSFETs Silicon P-Channel MOS (U-MOS) TJ60S04M3L 1.Applications * * * * Automotive Motor Drivers DC-DC C.

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Datasheet Specifications

Part number: TJ60S04M3L
Manufacturer: Toshiba ↗ Semiconductor
File Size: 242.83 KB
Datasheet: TJ60S04M3L-ToshibaSemiconductor.pdf
Description: MOSFETs

Features

* (1) (2) (3) (4) AEC-Q101 qualified Low drain-source on-resistance: RDS(ON) = 4.8 mΩ (typ. ) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source

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MOSFETs Toshiba Semiconductor

Toshiba Semiconductor TJ60S04M3L-like datasheet