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TJ60S06M3L Datasheet - Toshiba

TJ60S06M3L P-Channel MOSFET

TJ60S06M3L Features

* (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 8.6 mΩ (typ.) (VGS = -10 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -60 V) (4) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit TJ60S06M3L DPAK+ 1: Gate 2: Drain (hea

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Datasheet Details

Part number:

TJ60S06M3L

Manufacturer:

Toshiba ↗

File Size:

243.21 KB

Description:

P-channel mosfet.

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