TK14A65W5 - Silicon N-Channel MOSFET

Toshiba Semiconductor

Datasheet Details

Part number	TK14A65W5
Manufacturer	Toshiba ↗ Semiconductor
File Size	234.55 KB
Description	Silicon N-Channel MOSFET
Datasheet	TK14A65W5-ToshibaSemiconductor.pdf

(1) (2) (3) (4) Fast reverse recovery time: trr = 100 ns (typ. ) Low drain-source on-resistance: RDS(ON) = 0.25 Ω (typ. ) by using Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 0.69 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed.

📁 TK14A65W5 Similar Datasheet

Other Datasheets by Toshiba Semiconductor

Published: Sep 20, 2014 |