TK15E60U Datasheet - Toshiba Semiconductor

TK15E60U, MOSFETs

TK15E60U MOSFETs Silicon N-Channel MOS (DTMOS) TK15E60U 1.Applications * Switching Voltage Regulators 2..

Features

* (1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 0.24 Ω (typ. ) High forward transfer admittance: |Yfs| = 8.5 S (typ. ) Low leakage current: IDSS = 100 µA (max) (VDS = 600 V) Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate (G) 2: Drain

TK15E60U-ToshibaSemiconductor.pdf