TK15E60U - MOSFETs

Product Overview

Toshiba Semiconductor

Part number	TK15E60U
Manufacturer	Toshiba Semiconductor
File Size	244.13 KB
Description	MOSFETs
Datasheet	TK15E60U Datasheet
Additional preview pages of the TK15E60U datasheet.

(1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 0.24 Ω (typ. ) High forward transfer admittance: |Yfs| = 8.5 S (typ. ) Low leakage current: IDSS = 100 µA (max) (VDS = 600 V) Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate (G) 2: Drain (D)(Heatsink) 3: Source (S) TO-220 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current.

📁 Similar Datasheet

Other Datasheets by Toshiba Semiconductor

Published: Sep 11, 2014 |