TK15X60U Datasheet - Toshiba Semiconductor

TK15X60U MOSFETs

TK15X60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOSⅡ) TK15X60U Switching Regulator Applications Low drain-source ON resistance: RDS (ON) = 0.25 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 8.5 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain cu.

TK15X60U Features

* t, equipment used to control combustions or explosions, safety device

TK15X60U Datasheet (188.24 KB)