TK17N65W - MOSFETs

Product Overview

Toshiba Semiconductor

Part number	TK17N65W
Manufacturer	Toshiba Semiconductor
File Size	246.82 KB
Description	MOSFETs
Datasheet	TK17N65W Datasheet
Additional preview pages of the TK17N65W datasheet.

(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.17 Ω (typ. ) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 0.9 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source TO-247 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanch.

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Published: Sep 20, 2014 |